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Cho, Han-Hee
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Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups

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Title
Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups
Author
Yu, HojeongCho, Han-HeeCho, Chul-HeeKim, Ki-HyunKim, Dong YeongKim, Bumjoon J.Oh, Joon Hak
Issue Date
2013-06
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871
Abstract
A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C60 monoadduct (OXCMA) and indene C60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm2 V-1 s-1, which is one of the highest electron mobilities obtained from solution-processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge-carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs.
URI
https://scholarworks.unist.ac.kr/handle/201301/4041
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879101347
DOI
10.1021/am400618r
ISSN
1944-8244
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