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조한희

Cho, Han-Hee
Optoelectronic Nanomaterials Engineering Lab.
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dc.citation.endPage 4871 -
dc.citation.number 11 -
dc.citation.startPage 4865 -
dc.citation.title ACS APPLIED MATERIALS & INTERFACES -
dc.citation.volume 5 -
dc.contributor.author Yu, Hojeong -
dc.contributor.author Cho, Han-Hee -
dc.contributor.author Cho, Chul-Hee -
dc.contributor.author Kim, Ki-Hyun -
dc.contributor.author Kim, Dong Yeong -
dc.contributor.author Kim, Bumjoon J. -
dc.contributor.author Oh, Joon Hak -
dc.date.accessioned 2023-12-22T03:46:33Z -
dc.date.available 2023-12-22T03:46:33Z -
dc.date.created 2013-08-28 -
dc.date.issued 2013-06 -
dc.description.abstract A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C60 monoadduct (OXCMA) and indene C60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm2 V-1 s-1, which is one of the highest electron mobilities obtained from solution-processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge-carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs. -
dc.identifier.bibliographicCitation ACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871 -
dc.identifier.doi 10.1021/am400618r -
dc.identifier.issn 1944-8244 -
dc.identifier.scopusid 2-s2.0-84879101347 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/4041 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879101347 -
dc.identifier.wosid 000320484000052 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor fullerene -
dc.subject.keywordAuthor organic-field-effect transistor -
dc.subject.keywordAuthor solubilizing groups -
dc.subject.keywordAuthor n-type doping -
dc.subject.keywordAuthor molecular design -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus POLYMER SOLAR-CELLS -
dc.subject.keywordPlus SUBSTITUTED C-60 DERIVATIVES -
dc.subject.keywordPlus OPEN-CIRCUIT VOLTAGE -
dc.subject.keywordPlus N-TYPE DOPANT -
dc.subject.keywordPlus ORGANIC SEMICONDUCTORS -
dc.subject.keywordPlus CHARGE-TRANSPORT -
dc.subject.keywordPlus MATERIALS DESIGN -
dc.subject.keywordPlus PERFORMANCE -
dc.subject.keywordPlus MOBILITY -

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