Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
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- Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
- Kim, Kyung-Ho; Um, Doo-Seung; Lee, Hochan; Lim, Seongdong; Chang, Joonyeon; Koo, Hyun Cheol; Oh, Min-Wook; Ko, Hyunhyub; Kim, Hyung-jun
- epitaxial transfer; high-electron mobility transistor; selective wet-etching; spin field-effect transistor; spin-orbit interaction
- Issue Date
- AMER CHEMICAL SOC
- ACS NANO, v.7, no.10, pp.9106 - 9114
- We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.
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