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Ko, Hyunhyub
Functional Nanomaterials & Devices Lab.
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Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Author(s)
Kim, Kyung-HoUm, Doo-SeungLee, HochanLim, SeongdongChang, JoonyeonKoo, Hyun CheolOh, Min-WookKo, HyunhyubKim, Hyung-jun
Issued Date
2013-10
DOI
10.1021/nn403715p
URI
https://scholarworks.unist.ac.kr/handle/201301/4015
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84886996629
Citation
ACS NANO, v.7, no.10, pp.9106 - 9114
Abstract
We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
spin field-effect transistorepitaxial transferspin-orbit interactionhigh-electron mobility transistorselective wet-etching
Keyword
INITIO MOLECULAR-DYNAMICSHETEROGENEOUS INTEGRATIONCOMPOUND SEMICONDUCTORSQUANTUM-WELLHETEROSTRUCTUREPERFORMANCE

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