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DC Field | Value | Language |
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dc.citation.endPage | 9114 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 9106 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Kim, Kyung-Ho | - |
dc.contributor.author | Um, Doo-Seung | - |
dc.contributor.author | Lee, Hochan | - |
dc.contributor.author | Lim, Seongdong | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.contributor.author | Koo, Hyun Cheol | - |
dc.contributor.author | Oh, Min-Wook | - |
dc.contributor.author | Ko, Hyunhyub | - |
dc.contributor.author | Kim, Hyung-jun | - |
dc.date.accessioned | 2023-12-22T03:36:39Z | - |
dc.date.available | 2023-12-22T03:36:39Z | - |
dc.date.created | 2013-11-19 | - |
dc.date.issued | 2013-10 | - |
dc.description.abstract | We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.7, no.10, pp.9106 - 9114 | - |
dc.identifier.doi | 10.1021/nn403715p | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84886996629 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4015 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84886996629 | - |
dc.identifier.wosid | 000326209100083 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | spin field-effect transistor | - |
dc.subject.keywordAuthor | epitaxial transfer | - |
dc.subject.keywordAuthor | spin-orbit interaction | - |
dc.subject.keywordAuthor | high-electron mobility transistor | - |
dc.subject.keywordAuthor | selective wet-etching | - |
dc.subject.keywordPlus | INITIO MOLECULAR-DYNAMICS | - |
dc.subject.keywordPlus | HETEROGENEOUS INTEGRATION | - |
dc.subject.keywordPlus | COMPOUND SEMICONDUCTORS | - |
dc.subject.keywordPlus | QUANTUM-WELL | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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