Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition
Cited 0 times inCited 0 times in
- Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition
- Kwon, Soon-Yong; Sun, Q.; Kwak, J.; Seo, H-C; Han, J.
- Droplet formation; GaN buffer; Growth conditions; Growth mechanisms; Growth regime; InN layers; Metalorganic chemical vapour deposition; Oxide phase; Substrate temperature; Surface decomposition; Technological applications; Thermally activated; Three-dimensional growth; Zincblende structures
- Issue Date
- IOP PUBLISHING LTD
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.28, pp.1 - 6
- Growth of cubic InN (c-InN) under N-rich condition was achieved by metalorganic chemical vapour deposition on GaP(1 0 0) substrates with a cubic GaN (c-GaN) buffer layer. Insertion of the c-GaN buffer layer suppressed In droplet formation in c-InN. X-ray diffraction and transmission electron microscopy investigations showed that the InN layers have zincblende structure with only a small fraction of oxide phase inclusions and no significant hexagonal InN is present. By systemically varying growth conditions, it was found that the c-InN growth is dominated mainly by In adatoms' surface diffusion and InN surface decomposition and three distinct regimes of c-InN growth are observed. The growth of c-InN on c-GaN/GaP(1 0 0) templates eventually followed a three-dimensional growth mode in the thermally activated growth regime and density and size distribution of c-InN dots significantly changed with substrate temperature and growth rate. These results provide a stronger understanding of the growth mechanism to design and engineer InN-based nanostructures with desired shapes for potential technological applications.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.