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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition

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dc.contributor.author Kwon, Soon-Yong ko
dc.contributor.author Sun, Q. ko
dc.contributor.author Kwak, J. ko
dc.contributor.author Seo, H-C ko
dc.contributor.author Han, J. ko
dc.date.available 2014-04-10T02:22:34Z -
dc.date.created 2013-06-18 ko
dc.date.issued 2011-07 -
dc.identifier.citation JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.28, pp.1 - 6 ko
dc.identifier.issn 0022-3727 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3827 -
dc.identifier.uri http://iopscience.iop.org/article/10.1088/0022-3727/44/28/285403/meta ko
dc.description.abstract Growth of cubic InN (c-InN) under N-rich condition was achieved by metalorganic chemical vapour deposition on GaP(1 0 0) substrates with a cubic GaN (c-GaN) buffer layer. Insertion of the c-GaN buffer layer suppressed In droplet formation in c-InN. X-ray diffraction and transmission electron microscopy investigations showed that the InN layers have zincblende structure with only a small fraction of oxide phase inclusions and no significant hexagonal InN is present. By systemically varying growth conditions, it was found that the c-InN growth is dominated mainly by In adatoms' surface diffusion and InN surface decomposition and three distinct regimes of c-InN growth are observed. The growth of c-InN on c-GaN/GaP(1 0 0) templates eventually followed a three-dimensional growth mode in the thermally activated growth regime and density and size distribution of c-InN dots significantly changed with substrate temperature and growth rate. These results provide a stronger understanding of the growth mechanism to design and engineer InN-based nanostructures with desired shapes for potential technological applications. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IOP PUBLISHING LTD ko
dc.subject Droplet formation ko
dc.subject GaN buffer ko
dc.subject Growth conditions ko
dc.subject Growth mechanisms ko
dc.subject Growth regime ko
dc.subject InN layers ko
dc.subject Metalorganic chemical vapour deposition ko
dc.subject Oxide phase ko
dc.subject Substrate temperature ko
dc.subject Surface decomposition ko
dc.subject Technological applications ko
dc.subject Thermally activated ko
dc.subject Three-dimensional growth ko
dc.subject Zincblende structures ko
dc.title Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-79960277589 ko
dc.identifier.wosid 000292090400014 ko
dc.type.rims ART ko
dc.description.wostc 0 *
dc.description.scopustc 0 *
dc.date.tcdate 2015-02-28 *
dc.date.scptcdate 2014-07-12 *
dc.identifier.doi 10.1088/0022-3727/44/28/285403 ko
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