Intracavity-contacted resonant cavity enhanced photodetectors (IC RCEPDs) have been fabricated for monolithic integration with IC VCSELs. A low parasitic capacitance of 0.39 pF and an extrinsic 3-dB bandwidth of 9 GHz are demonstrated by using coplanar metal contacts. Optimization issues on device and epi designs are discussed. The largest frequency saturation photocurrent below which the extrinsic 3-dB bandwidth exceeds 6.5 GHz is 4.2 μA.