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- Chung, Il-Sug
- Nano-Optoelectronics Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | Gwangju | - |
| dc.citation.title | Optoelectronic Materials and Devices | - |
| dc.citation.volume | 6352 I | - |
| dc.contributor.author | Chung, Il-Sug | - |
| dc.contributor.author | Choi, Jin-Kyung | - |
| dc.contributor.author | Chang, Ki-Soo | - |
| dc.contributor.author | Alameh, Kamal | - |
| dc.contributor.author | Lee, Yong Tak | - |
| dc.date.accessioned | 2023-12-20T05:08:06Z | - |
| dc.date.available | 2023-12-20T05:08:06Z | - |
| dc.date.created | 2018-02-27 | - |
| dc.date.issued | 2006-09-05 | - |
| dc.description.abstract | Intracavity-contacted resonant cavity enhanced photodetectors (IC RCEPDs) have been fabricated for monolithic integration with IC VCSELs. A low parasitic capacitance of 0.39 pF and an extrinsic 3-dB bandwidth of 9 GHz are demonstrated by using coplanar metal contacts. Optimization issues on device and epi designs are discussed. The largest frequency saturation photocurrent below which the extrinsic 3-dB bandwidth exceeds 6.5 GHz is 4.2 μA. | - |
| dc.identifier.bibliographicCitation | Optoelectronic Materials and Devices, v.6352 I | - |
| dc.identifier.doi | 10.1117/12.691608 | - |
| dc.identifier.scopusid | 2-s2.0-33845669020 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/37439 | - |
| dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6352/1/Intracavity-contacted-resonant-cavity-enhanced-photodetectors-based-on-VCSEL-structure/10.1117/12.691608.full | - |
| dc.language | 영어 | - |
| dc.publisher | Optoelectronic Materials and Devices | - |
| dc.title | Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2006-09-05 | - |
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