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Park, Kibog
Emergent Materials & Devices Lab.
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Near room-temperature synthesis of transfer-free graphene films

Author(s)
Park, Kibog
Issued Date
2012-08-16
URI
https://scholarworks.unist.ac.kr/handle/201301/36986
Citation
Nano Korea 2012
Abstract
Large-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (∼1,000 °C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO2/Si substrates, even plastics and glass at close to room temperature (25-160 °C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/ substrate to form graphene underneath the nickel film at the nickel-substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO2 surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices.
Publisher
MEST/MKE

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