dc.citation.conferencePlace |
KO |
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dc.citation.conferencePlace |
Seoul |
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dc.citation.title |
Nano Korea 2012 |
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dc.contributor.author |
Park, Kibog |
- |
dc.date.accessioned |
2023-12-20T02:06:06Z |
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dc.date.available |
2023-12-20T02:06:06Z |
- |
dc.date.created |
2013-07-17 |
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dc.date.issued |
2012-08-16 |
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dc.description.abstract |
Large-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (∼1,000 °C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO2/Si substrates, even plastics and glass at close to room temperature (25-160 °C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/ substrate to form graphene underneath the nickel film at the nickel-substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO2 surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices. |
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dc.identifier.bibliographicCitation |
Nano Korea 2012 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/36986 |
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dc.language |
영어 |
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dc.publisher |
MEST/MKE |
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dc.title |
Near room-temperature synthesis of transfer-free graphene films |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2012-08-16 |
- |