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신형준

Shin, Hyung-Joon
Nanoscale Materials Science Lab.
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Activation of Ultrathin Oxide Films for Chemical Reaction by Interface Defects

Author(s)
Jung, JaehoonShin, Hyung-JoonKim, YousooKawai, Maki
Issued Date
2011-04
DOI
10.1021/ja200854g
URI
https://scholarworks.unist.ac.kr/handle/201301/3615
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79955030526
Citation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.133, no.16, pp.6142 - 6145
Abstract
Periodic density functional theory calculations revealed strong enhancement of chemical reactivity by defects located at the oxide-metal interface for water dissociation on ultrathin MgO films deposited on Ag(100) substrate. Accumulation of charge density at the oxide-metal interface due to irregular interface defects influences the chemical reactivity of MgO films by changing the charge distribution at the oxide surface. Our results reveal the importance of buried interface defects in controlling chemical reactions on an ultrathin oxide film supported by a metal substrate.
Publisher
AMER CHEMICAL SOC
ISSN
0002-7863

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