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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Modeling and RF Analysis of Silicon Inter-Band Tunnel Diode with THz Cut-Off Frequency
- Author(s)
- Kim, Kyung Rok, Kang, In Man, Dutton, Robert W.
- Issued Date
- 2010-06-13
- Citation
- 2010 15th Silicon Nanoelectronics Workshop, SNW 2010
- Abstract
- We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.
- Publisher
- 2010 15th Silicon Nanoelectronics Workshop, SNW 2010
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