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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Honolulu, HI | - |
| dc.citation.title | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010 | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Kang, In Man | - |
| dc.contributor.author | Dutton, Robert W. | - |
| dc.date.accessioned | 2023-12-20T03:37:23Z | - |
| dc.date.available | 2023-12-20T03:37:23Z | - |
| dc.date.created | 2013-07-17 | - |
| dc.date.issued | 2010-06-13 | - |
| dc.description.abstract | We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions. | - |
| dc.identifier.bibliographicCitation | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010 | - |
| dc.identifier.doi | 10.1109/SNW.2010.5562553 | - |
| dc.identifier.scopusid | 2-s2.0-77958005856 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35763 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5562553 | - |
| dc.language | 영어 | - |
| dc.publisher | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010 | - |
| dc.title | Modeling and RF Analysis of Silicon Inter-Band Tunnel Diode with THz Cut-Off Frequency | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2010-06-13 | - |
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