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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Novel design of multiple negative-differential resistance (NDR) device in a 32nm CMOS technology using TCAD
- Author(s)
- Sing, Sunhae, Kim, Kyung Rok
- Issued Date
- 2013-09-03
- Citation
- 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, pp.316 - 319
- Abstract
- We propose a novel multiple negative differential resistance (NDR) device with the positive inclined tri-state voltage transfer characteristics (VTC) between drain and gate of 32nm n-type MOSFET based on gate-induced drain leakage (GIDL) enhanced off-state CMOS ternary inverter. The ultrahigh 1st and 2nd peak-to-valley current ratio (PVCR) over 104 can be designed with high slope of inclined ternary VTC by increasing the GIDL effects.
- Publisher
- University of Glasgow
- ISSN
- 1946-1569
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