dc.citation.conferencePlace |
UK |
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dc.citation.conferencePlace |
Glasgow |
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dc.citation.endPage |
319 |
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dc.citation.startPage |
316 |
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dc.citation.title |
18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 |
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dc.contributor.author |
Sing, Sunhae |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.date.accessioned |
2023-12-20T00:39:26Z |
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dc.date.available |
2023-12-20T00:39:26Z |
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dc.date.created |
2013-11-04 |
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dc.date.issued |
2013-09-03 |
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dc.description.abstract |
We propose a novel multiple negative differential resistance (NDR) device with the positive inclined tri-state voltage transfer characteristics (VTC) between drain and gate of 32nm n-type MOSFET based on gate-induced drain leakage (GIDL) enhanced off-state CMOS ternary inverter. The ultrahigh 1st and 2nd peak-to-valley current ratio (PVCR) over 104 can be designed with high slope of inclined ternary VTC by increasing the GIDL effects. |
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dc.identifier.bibliographicCitation |
18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, pp.316 - 319 |
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dc.identifier.doi |
10.1109/SISPAD.2013.6650638 |
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dc.identifier.issn |
1946-1569 |
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dc.identifier.scopusid |
2-s2.0-84891128387 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/35633 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/6650638 |
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dc.language |
영어 |
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dc.publisher |
University of Glasgow |
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dc.title |
Novel design of multiple negative-differential resistance (NDR) device in a 32nm CMOS technology using TCAD |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2013-09-03 |
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