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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | UK | - |
| dc.citation.conferencePlace | Glasgow | - |
| dc.citation.endPage | 319 | - |
| dc.citation.startPage | 316 | - |
| dc.citation.title | 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 | - |
| dc.contributor.author | Sing, Sunhae | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-20T00:39:26Z | - |
| dc.date.available | 2023-12-20T00:39:26Z | - |
| dc.date.created | 2013-11-04 | - |
| dc.date.issued | 2013-09-03 | - |
| dc.description.abstract | We propose a novel multiple negative differential resistance (NDR) device with the positive inclined tri-state voltage transfer characteristics (VTC) between drain and gate of 32nm n-type MOSFET based on gate-induced drain leakage (GIDL) enhanced off-state CMOS ternary inverter. The ultrahigh 1st and 2nd peak-to-valley current ratio (PVCR) over 104 can be designed with high slope of inclined ternary VTC by increasing the GIDL effects. | - |
| dc.identifier.bibliographicCitation | 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, pp.316 - 319 | - |
| dc.identifier.doi | 10.1109/SISPAD.2013.6650638 | - |
| dc.identifier.issn | 1946-1569 | - |
| dc.identifier.scopusid | 2-s2.0-84891128387 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35633 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6650638 | - |
| dc.language | 영어 | - |
| dc.publisher | University of Glasgow | - |
| dc.title | Novel design of multiple negative-differential resistance (NDR) device in a 32nm CMOS technology using TCAD | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2013-09-03 | - |
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