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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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FinHEMT: FinFET-based High Electron Mobility Transistor with Strained Silicon Channel
- Author(s)
- Kim, Sung-Ho, Park, Jong Yul, Kim, Kyung Rok
- Issued Date
- 2015-07-29
- Citation
- 2015 15th International Conference On Nanotechnology , pp.905 - 908
- Abstract
- We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high oncurrent (> 1 mA/mm) and low off-current (~10 pA/mm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cm2/Vs, which is 4 times higher than that of FinFET.
- Publisher
- IEEE
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