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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | IT | - |
| dc.citation.conferencePlace | Rome(Italy) | - |
| dc.citation.endPage | 908 | - |
| dc.citation.startPage | 905 | - |
| dc.citation.title | 2015 15th International Conference On Nanotechnology | - |
| dc.contributor.author | Kim, Sung-Ho | - |
| dc.contributor.author | Park, Jong Yul | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-19T22:08:14Z | - |
| dc.date.available | 2023-12-19T22:08:14Z | - |
| dc.date.created | 2015-11-26 | - |
| dc.date.issued | 2015-07-29 | - |
| dc.description.abstract | We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high oncurrent (> 1 mA/mm) and low off-current (~10 pA/mm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cm2/Vs, which is 4 times higher than that of FinFET. | - |
| dc.identifier.bibliographicCitation | 2015 15th International Conference On Nanotechnology , pp.905 - 908 | - |
| dc.identifier.doi | 10.1109/NANO.2015.7388761 | - |
| dc.identifier.scopusid | 2-s2.0-84964354759 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35502 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7388761 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | FinHEMT: FinFET-based High Electron Mobility Transistor with Strained Silicon Channel | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2015-07-27 | - |
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