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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics

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Title
Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics
Author
Shin, SunhaeKang, In ManKim, Kyung Rok
Issue Date
2012-06
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.1 - 7
Abstract
In this paper, we propose a radio-frequency (RF) model and parameter extraction method for vertical junctionless silicon nanowire (VJL SNW) field-effect transistors (FETs) using three-dimensional (3D) device simulation. We introduce the substrate-related components such as the substrate resistance (R-sub) and drain-to-substrate capacitance (C-sub), and evaluate the RF performance such as f(t), f(max), gate input capacitance, and transport time delay. A quasi-static (QS) RF model has been used in simulation program with integrated circuit emphasis (SPICE) circuit simulator to simulate VJL SNW FETs with RF parameters extracted from 3D device simulated Y-parameters. We confirmed the validity of our RF model by the well-matched results between HSPICE and 3D device simulation in terms of the Y-parameters and the S-22-parameter up to 100 GHz.
URI
https://scholarworks.unist.ac.kr/handle/201301/3510
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84863326479
DOI
10.1143/JJAP.51.06FE20
ISSN
0021-4922
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