File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김경록

Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.endPage 7 -
dc.citation.number 6 -
dc.citation.startPage 1 -
dc.citation.title JAPANESE JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 51 -
dc.contributor.author Shin, Sunhae -
dc.contributor.author Kang, In Man -
dc.contributor.author Kim, Kyung Rok -
dc.date.accessioned 2023-12-22T05:08:43Z -
dc.date.available 2023-12-22T05:08:43Z -
dc.date.created 2013-06-18 -
dc.date.issued 2012-06 -
dc.description.abstract In this paper, we propose a radio-frequency (RF) model and parameter extraction method for vertical junctionless silicon nanowire (VJL SNW) field-effect transistors (FETs) using three-dimensional (3D) device simulation. We introduce the substrate-related components such as the substrate resistance (R-sub) and drain-to-substrate capacitance (C-sub), and evaluate the RF performance such as f(t), f(max), gate input capacitance, and transport time delay. A quasi-static (QS) RF model has been used in simulation program with integrated circuit emphasis (SPICE) circuit simulator to simulate VJL SNW FETs with RF parameters extracted from 3D device simulated Y-parameters. We confirmed the validity of our RF model by the well-matched results between HSPICE and 3D device simulation in terms of the Y-parameters and the S-22-parameter up to 100 GHz. -
dc.identifier.bibliographicCitation JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.1 - 7 -
dc.identifier.doi 10.1143/JJAP.51.06FE20 -
dc.identifier.issn 0021-4922 -
dc.identifier.scopusid 2-s2.0-84863326479 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3510 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84863326479 -
dc.identifier.wosid 000306189800067 -
dc.language 영어 -
dc.publisher JAPAN SOC APPLIED PHYSICS -
dc.title Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.description.journalRegisteredClass scie -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.