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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology
- Alternative Title
- High-Performance Plasmonic THz Detector by Monolithic Integration of Asymmetric FET-Antenna in 65-nm CMOS Technology
- Author(s)
- Ryu, Min Woo, Lee, Jeong Seop, Kim, Kwan Sung, Yang, Jong-Ryul, Han, Seong-Tae, Kim, Kyung Rok
- Issued Date
- 2015-07-28
- Citation
- 2015 15th International Conference On Nanotechnology
- Abstract
- In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and verticallyintegrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz0.5 at 0.2 THz.
- Publisher
- IEEE
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