dc.citation.conferencePlace |
IT |
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dc.citation.conferencePlace |
Rome |
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dc.citation.title |
2015 15th International Conference On Nanotechnology |
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dc.contributor.author |
Ryu, Min Woo |
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dc.contributor.author |
Lee, Jeong Seop |
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dc.contributor.author |
Kim, Kwan Sung |
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dc.contributor.author |
Yang, Jong-Ryul |
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dc.contributor.author |
Han, Seong-Tae |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.date.accessioned |
2023-12-19T22:08:18Z |
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dc.date.available |
2023-12-19T22:08:18Z |
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dc.date.created |
2015-11-26 |
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dc.date.issued |
2015-07-28 |
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dc.description.abstract |
In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and verticallyintegrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz0.5 at 0.2 THz. |
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dc.identifier.bibliographicCitation |
2015 15th International Conference On Nanotechnology |
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dc.identifier.doi |
10.1109/NANO.2015.7388686 |
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dc.identifier.scopusid |
2-s2.0-84964330355 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/34984 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/7388686 |
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dc.language |
영어 |
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dc.publisher |
IEEE |
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dc.title.alternative |
High-Performance Plasmonic THz Detector by Monolithic Integration of Asymmetric FET-Antenna in 65-nm CMOS Technology |
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dc.title |
High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2015-07-27 |
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