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- Bielawski, Christopher W.
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Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)
- Author(s)
- Lei, Ming, Yum, J. H., Price, J., Hudnall, Todd W., Bielawski, C. W., Banerjee, S. K., Lysaght, P. S., Bersuker, G., Downer, M. C.
- Issued Date
- 2012-03
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.12, pp.122906
- Abstract
- We report optical characterization of the conduction band offset (CBO) between atomic-layer-deposited single crystal BeO and Si using internal photoemission (IPE) and internal multi-photon photoemission (IMPE), and of the valence band offset (VBO) using synchrotron x-ray photoelectron spectroscopy. The IPE/IMPE measurements indicate a CBO of 2.31 +/- 0.1 eV for 10 nm thick as-deposited oxides. For samples subjected to post-deposition anneal in N-2 at 600 degrees C and 900 degrees C, it increases to 2.54 +/- 0.1 eV and 2.61 +/- 0.1 eV, respectively. The VBO is stable at 4.14 +/- 0.2 eV for both as-deposited and annealed samples.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
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