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- Bielawski, Christopher W.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 12 | - |
| dc.citation.startPage | 122906 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 100 | - |
| dc.contributor.author | Lei, Ming | - |
| dc.contributor.author | Yum, J. H. | - |
| dc.contributor.author | Price, J. | - |
| dc.contributor.author | Hudnall, Todd W. | - |
| dc.contributor.author | Bielawski, C. W. | - |
| dc.contributor.author | Banerjee, S. K. | - |
| dc.contributor.author | Lysaght, P. S. | - |
| dc.contributor.author | Bersuker, G. | - |
| dc.contributor.author | Downer, M. C. | - |
| dc.date.accessioned | 2023-12-22T05:14:47Z | - |
| dc.date.available | 2023-12-22T05:14:47Z | - |
| dc.date.created | 2020-07-10 | - |
| dc.date.issued | 2012-03 | - |
| dc.description.abstract | We report optical characterization of the conduction band offset (CBO) between atomic-layer-deposited single crystal BeO and Si using internal photoemission (IPE) and internal multi-photon photoemission (IMPE), and of the valence band offset (VBO) using synchrotron x-ray photoelectron spectroscopy. The IPE/IMPE measurements indicate a CBO of 2.31 +/- 0.1 eV for 10 nm thick as-deposited oxides. For samples subjected to post-deposition anneal in N-2 at 600 degrees C and 900 degrees C, it increases to 2.54 +/- 0.1 eV and 2.61 +/- 0.1 eV, respectively. The VBO is stable at 4.14 +/- 0.2 eV for both as-deposited and annealed samples. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.12, pp.122906 | - |
| dc.identifier.doi | 10.1063/1.3697646 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-84859556852 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/33152 | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3697646 | - |
| dc.identifier.wosid | 000302228700061 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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