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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

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Title
Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
Author
Yang, SeunghoonCha, JanghwanKim, Jong ChanLee, DonghunHuh, WoongKim, YoonseokLee, Seong WonPark, Hong-GyuJeong, Hu YoungHong, SuklyunLee, Gwan-HyoungLee, Chul-Ho
Issue Date
2020-04
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.20, no.4, pp.2443 - 2451
Abstract
In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS(2 )p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.
URI
https://scholarworks.unist.ac.kr/handle/201301/32073
URL
https://pubs.acs.org/doi/10.1021/acs.nanolett.9b05162
DOI
10.1021/acs.nanolett.9b05162
ISSN
1530-6984
Appears in Collections:
UCRF_Journal Papers
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