File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

정후영

Jeong, Hu Young
UCRF Electron Microscopy group
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

Author(s)
Yang, SeunghoonCha, JanghwanKim, Jong ChanLee, DonghunHuh, WoongKim, YoonseokLee, Seong WonPark, Hong-GyuJeong, Hu YoungHong, SuklyunLee, Gwan-HyoungLee, Chul-Ho
Issued Date
2020-04
DOI
10.1021/acs.nanolett.9b05162
URI
https://scholarworks.unist.ac.kr/handle/201301/32073
Fulltext
https://pubs.acs.org/doi/10.1021/acs.nanolett.9b05162
Citation
NANO LETTERS, v.20, no.4, pp.2443 - 2451
Abstract
In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS(2 )p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
Keyword (Author)
2D semiconductorstransition metal dichalcogenidesheterostructuresoptoelectronicsphotovoltaicscontact engineering
Keyword
TRANSITION-METAL DICHALCOGENIDESPHOTOCURRENT GENERATIONWAALSLAYERMOS2HETEROSTRUCTURESTRANSISTORSEFFICIENCYEMISSIONDIODES

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.