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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

DC Field Value Language
dc.contributor.author Yang, Seunghoon ko
dc.contributor.author Cha, Janghwan ko
dc.contributor.author Kim, Jong Chan ko
dc.contributor.author Lee, Donghun ko
dc.contributor.author Huh, Woong ko
dc.contributor.author Kim, Yoonseok ko
dc.contributor.author Lee, Seong Won ko
dc.contributor.author Park, Hong-Gyu ko
dc.contributor.author Jeong, Hu Young ko
dc.contributor.author Hong, Suklyun ko
dc.contributor.author Lee, Gwan-Hyoung ko
dc.contributor.author Lee, Chul-Ho ko
dc.date.available 2020-05-15T09:26:35Z -
dc.date.created 2020-05-13 ko
dc.date.issued 2020-04 ko
dc.identifier.citation NANO LETTERS, v.20, no.4, pp.2443 - 2451 ko
dc.identifier.issn 1530-6984 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/32073 -
dc.description.abstract In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS(2 )p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics. ko
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85083003512 ko
dc.identifier.wosid 000526413400028 ko
dc.type.rims ART ko
dc.identifier.doi 10.1021/acs.nanolett.9b05162 ko
dc.identifier.url https://pubs.acs.org/doi/10.1021/acs.nanolett.9b05162 ko
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