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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates

Author(s)
Shin, Jae CheolChoi, Kyoung JinKim, Do YangChoi, Won JunLi, Xiuling
Issued Date
2012-06
DOI
10.1021/cg300210h
URI
https://scholarworks.unist.ac.kr/handle/201301/3090
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84861919474
Citation
CRYSTAL GROWTH & DESIGN, v.12, no.6, pp.2994 - 2998
Abstract
Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In(chi)Gal(1-chi)As on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In chi Ga1-chi As NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In chi Ga1-chi As NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.
Publisher
AMER CHEMICAL SOC
ISSN
1528-7483
Keyword
INGAAS NANOWIRESTHIN-FILMSHETEROSTRUCTURESEPITAXYAREA

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