Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

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Title
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
Author
Lee, KyoungjunLee, Hyun-JaeLee, Tae YoonLim, Hong HeonSong, Myeonl SeopYoo, Hyang KeunSuh, Dong IkLee, Jae GilZhu, ZhongweiYoon, AlexanderMacDonald, Matthew R.Lei, XinjianPark, KunwooPark, JungwonLee, Jun HeeChae, Seung Chul
Issue Date
2019-10
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.11, no.42, pp.38929 - 38936
Abstract
The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO2. Through the combination of conventional voltage measurements, hysteresis temperature dependence analysis, piezoelectric force microscopy, first-principles calculations, and Monte Carlo simulations, we suggest that the unprecedented stability of intermediate states in ferroelectric HfO2 is due to the small critical volume size for nucleation and the large activation energy for ferroelectric dipole flipping. This work demonstrates the potential of ferroelectric HfO2 for analogue device applications enabling neuromorphic computing.
URI
https://scholarworks.unist.ac.kr/handle/201301/30785
URL
https://pubs.acs.org/doi/10.1021/acsami.9b12878
DOI
10.1021/acsami.9b12878
ISSN
1944-8244
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