Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer
Cited 0 times inCited 0 times in
- Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer
- Yoon, Hoon Hahn; Song, Wonho; Jung, Sungchul; Kim, Junhyung; Mo, Kyuhyung; Choi, Gahyun; Jeong, Hu Young; Lee, Jong Hoon; Park, Kibog
- Issue Date
- American Chemical Society
- ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47182 - 47189
- It is demonstrated that the electric dipole layer due to the overlapping of electron wave functions at the metal/graphene contact results in a negative Fermi-level pinning effect on the region of the GaAs surface with low interface-trap density in the metal/graphene/n-GaAs(001) junction. The graphene interlayer plays the role of a diffusion barrier, preventing the atomic intermixing at the interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the decrease of the Schottky barrier with the increase of the metal work function. Our work shows that the graphene interlayer can invert the effective work function of the metal between high and low, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly high work function) metal electrodes on a semiconductor substrate possessing low surface-state density.
- Appears in Collections:
- SNS_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.