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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer

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Title
Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer
Author
Yoon, Hoon HahnSong, WonhoJung, SungchulKim, JunhyungMo, KyuhyungChoi, GahyunJeong, Hu YoungLee, Jong HoonPark, Kibog
Issue Date
2019-12
Publisher
American Chemical Society
Citation
ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47182 - 47189
Abstract
It is demonstrated that the electric dipole layer due to the overlapping of electron wave functions at the metal/graphene contact results in a negative Fermi-level pinning effect on the region of the GaAs surface with low interface-trap density in the metal/graphene/n-GaAs(001) junction. The graphene interlayer plays the role of a diffusion barrier, preventing the atomic intermixing at the interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the decrease of the Schottky barrier with the increase of the metal work function. Our work shows that the graphene interlayer can invert the effective work function of the metal between high and low, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly high work function) metal electrodes on a semiconductor substrate possessing low surface-state density.
URI
https://scholarworks.unist.ac.kr/handle/201301/30762
URL
https://pubs.acs.org/doi/10.1021/acsami.9b12074
DOI
10.1021/acsami.9b12074
ISSN
1944-8244
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