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DC Field | Value | Language |
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dc.citation.endPage | 47189 | - |
dc.citation.number | 50 | - |
dc.citation.startPage | 47182 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Yoon, Hoon Hahn | - |
dc.contributor.author | Song, Wonho | - |
dc.contributor.author | Jung, Sungchul | - |
dc.contributor.author | Kim, Junhyung | - |
dc.contributor.author | Mo, Kyuhyung | - |
dc.contributor.author | Choi, Gahyun | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Lee, Jong Hoon | - |
dc.contributor.author | Park, Kibog | - |
dc.date.accessioned | 2023-12-21T18:13:31Z | - |
dc.date.available | 2023-12-21T18:13:31Z | - |
dc.date.created | 2020-01-07 | - |
dc.date.issued | 2019-12 | - |
dc.description.abstract | It is demonstrated that the electric dipole layer due to the overlapping of electron wave functions at the metal/graphene contact results in a negative Fermi-level pinning effect on the region of the GaAs surface with low interface-trap density in the metal/graphene/n-GaAs(001) junction. The graphene interlayer plays the role of a diffusion barrier, preventing the atomic intermixing at the interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the decrease of the Schottky barrier with the increase of the metal work function. Our work shows that the graphene interlayer can invert the effective work function of the metal between high and low, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly high work function) metal electrodes on a semiconductor substrate possessing low surface-state density. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47182 - 47189 | - |
dc.identifier.doi | 10.1021/acsami.9b12074 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85077016306 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30762 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.9b12074 | - |
dc.identifier.wosid | 000503918300084 | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordAuthor | negative Fermi-level pinning | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | interaction dipole layer | - |
dc.subject.keywordAuthor | diffusion barrier | - |
dc.subject.keywordAuthor | interface-trap density | - |
dc.subject.keywordPlus | ELECTRON-EMISSION-MICROSCOPY | - |
dc.subject.keywordPlus | SEMICONDUCTOR INTERFACES | - |
dc.subject.keywordPlus | SCHOTTKY BARRIERS | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | HEIGHT | - |
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