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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction

Author(s)
Kim, YongsamLee, GeunsikLi, NannanSeo, JikeunKim, Kwang S.Kim, Namdong
Issued Date
2019-12
DOI
10.1038/s41699-019-0134-2
URI
https://scholarworks.unist.ac.kr/handle/201301/30645
Fulltext
https://www.nature.com/articles/s41699-019-0134-2
Citation
NPJ 2D MATERIALS AND APPLICATIONS, v.3, no.1, pp.51
Abstract
During growth of two-dimensional (2D) materials, abrupt growth of multilayers is practically unavoidable even in the case of well-controlled growth. In epitaxial growth of a quintuple-layered Bi2Se3 film, we observe that the multilayer growth pattern deduced from in situ x-ray diffraction implies nontrivial interlayer diffusion process. Here we find that an intriguing diffusion process occurs at step edges where a slowly downward-diffusing Se adatom having a high step-edge barrier interacts with a Bi adatom pre-existing at step edges. The Se–Bi interaction lowers the high step-edge barrier of Se adatoms. This drastic reduction of the overall step-edge barrier and hence increased interlayer diffusion modifies the overall growth significantly. Thus, a step-edge barrier reduction mechanism assisted by hetero adatom–adatom interaction could be fairly general in multilayer growth of 2D heteroatomic materials.
Publisher
NATURE PUBLISHING GROUP
ISSN
2397-7132
Keyword
SURFACE SELF-DIFFUSIONNUCLEATIONVIEW

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