Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction

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dc.contributor.author Kim, Yongsam ko
dc.contributor.author Lee, Geunsik ko
dc.contributor.author Li, Nannan ko
dc.contributor.author Seo, Jikeun ko
dc.contributor.author Kim, Kwang S. ko
dc.contributor.author Kim, Namdong ko
dc.date.available 2019-12-26T09:29:34Z -
dc.date.created 2019-12-25 ko
dc.date.issued 2019-12 ko
dc.identifier.citation NPJ 2D MATERIALS AND APPLICATIONS, v.3, no.1, pp.51 ko
dc.identifier.issn 2397-7132 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/30645 -
dc.description.abstract During growth of two-dimensional (2D) materials, abrupt growth of multilayers is practically unavoidable even in the case of well-controlled growth. In epitaxial growth of a quintuple-layered Bi2Se3 film, we observe that the multilayer growth pattern deduced from in situ x-ray diffraction implies nontrivial interlayer diffusion process. Here we find that an intriguing diffusion process occurs at step edges where a slowly downward-diffusing Se adatom having a high step-edge barrier interacts with a Bi adatom pre-existing at step edges. The Se–Bi interaction lowers the high step-edge barrier of Se adatoms. This drastic reduction of the overall step-edge barrier and hence increased interlayer diffusion modifies the overall growth significantly. Thus, a step-edge barrier reduction mechanism assisted by hetero adatom–adatom interaction could be fairly general in multilayer growth of 2D heteroatomic materials. ko
dc.language 영어 ko
dc.publisher NATURE PUBLISHING GROUP ko
dc.title Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85076908909 ko
dc.identifier.wosid 000509572100001 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41699-019-0134-2 ko
dc.identifier.url https://www.nature.com/articles/s41699-019-0134-2 ko
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