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정건욱

Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer

Author(s)
Chung, KunookLee, KeundongTchoe, YoungbinOh, HongseokPark, JunBeomHyun, Jerome K.Yi, Gyu-Chul
Issued Date
2019-06
DOI
10.1016/j.nanoen.2019.03.040
URI
https://scholarworks.unist.ac.kr/handle/201301/30409
Fulltext
https://www.sciencedirect.com/science/article/pii/S2211285519302289?via%3Dihub
Citation
NANO ENERGY, v.60, pp.82 - 86
Abstract
We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-μm-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of In x Ga 1–x N/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs.
Publisher
Elsevier Ltd
ISSN
2211-2855
Keyword (Author)
Epitaxial lateral overgrowthGallium nitride microstructureGrapheneLight-emitting diode arraysMetal electrode substrate
Keyword
Metal electrodesDiodesElectrodesFabricationGrapheneIII-V semiconductorsIndium compoundsLightLight emitting diodesLithographyMicromachiningMicrostructureOhmic contactsSemiconductor quantum wellsTungstenConventional lithographyEpitaxial lateral overgrowthIntermediate layersLight emitting diode arraysNovel strategiesSelective area growthSingle-crystalline phaseGallium nitride

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