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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 86 | - |
dc.citation.startPage | 82 | - |
dc.citation.title | NANO ENERGY | - |
dc.citation.volume | 60 | - |
dc.contributor.author | Chung, Kunook | - |
dc.contributor.author | Lee, Keundong | - |
dc.contributor.author | Tchoe, Youngbin | - |
dc.contributor.author | Oh, Hongseok | - |
dc.contributor.author | Park, JunBeom | - |
dc.contributor.author | Hyun, Jerome K. | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2023-12-21T19:08:17Z | - |
dc.date.available | 2023-12-21T19:08:17Z | - |
dc.date.created | 2019-04-09 | - |
dc.date.issued | 2019-06 | - |
dc.description.abstract | We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-μm-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of In x Ga 1–x N/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs. | - |
dc.identifier.bibliographicCitation | NANO ENERGY, v.60, pp.82 - 86 | - |
dc.identifier.doi | 10.1016/j.nanoen.2019.03.040 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.scopusid | 2-s2.0-85063012812 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30409 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S2211285519302289?via%3Dihub | - |
dc.identifier.wosid | 000467774100010 | - |
dc.language | 영어 | - |
dc.publisher | Elsevier Ltd | - |
dc.title | GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Epitaxial lateral overgrowth | - |
dc.subject.keywordAuthor | Gallium nitride microstructure | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Light-emitting diode arrays | - |
dc.subject.keywordAuthor | Metal electrode substrate | - |
dc.subject.keywordPlus | Metal electrodes | - |
dc.subject.keywordPlus | Diodes | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Graphene | - |
dc.subject.keywordPlus | III-V semiconductors | - |
dc.subject.keywordPlus | Indium compounds | - |
dc.subject.keywordPlus | Light | - |
dc.subject.keywordPlus | Light emitting diodes | - |
dc.subject.keywordPlus | Lithography | - |
dc.subject.keywordPlus | Micromachining | - |
dc.subject.keywordPlus | Microstructure | - |
dc.subject.keywordPlus | Ohmic contacts | - |
dc.subject.keywordPlus | Semiconductor quantum wells | - |
dc.subject.keywordPlus | Tungsten | - |
dc.subject.keywordPlus | Conventional lithography | - |
dc.subject.keywordPlus | Epitaxial lateral overgrowth | - |
dc.subject.keywordPlus | Intermediate layers | - |
dc.subject.keywordPlus | Light emitting diode arrays | - |
dc.subject.keywordPlus | Novel strategies | - |
dc.subject.keywordPlus | Selective area growth | - |
dc.subject.keywordPlus | Single-crystalline phase | - |
dc.subject.keywordPlus | Gallium nitride | - |
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