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- Jeong, Hongsik
- Future Semiconductor Technology Lab.
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Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics
- Issued Date
- 2012-04
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.4, pp.04DD14
- Abstract
- A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (I-RESET), set voltage variation, and forming voltage (V-FORMING), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable I-RESET to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement.
- Publisher
- IOP PUBLISHING LTD
- ISSN
- 0021-4922
- Keyword
- TRANSITION-METAL OXIDES, NONVOLATILE MEMORY, RESISTANCE, DEVICES, FILMS, MODEL
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