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- Jeong, Hongsik
- Future Semiconductor Technology Lab.
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TEMPERATURE AND SIZE DEPENDENT EXCITONIC RELAXATION PROCESS IN GAAS/ALGAAS QUANTUM-WELLS
- Author(s)
- Jeong, Hongsik, Lee, In-Ja, Seo, Jung-Chul, Lee, Minyung, Kim, Dongho, Park, Seong-Ju, Park, Seung-Han, Kim, Ung
- Issued Date
- 1993-01
- Citation
- SOLID STATE COMMUNICATIONS, v.85, no.2, pp.111 - 114
- Abstract
- Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single photon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- ISSN
- 0038-1098
- Keyword
- ROOM-TEMPERATURE, GAAS, DYNAMICS
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