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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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dc.citation.endPage 114 -
dc.citation.number 2 -
dc.citation.startPage 111 -
dc.citation.title SOLID STATE COMMUNICATIONS -
dc.citation.volume 85 -
dc.contributor.author Jeong, Hongsik -
dc.contributor.author Lee, In-Ja -
dc.contributor.author Seo, Jung-Chul -
dc.contributor.author Lee, Minyung -
dc.contributor.author Kim, Dongho -
dc.contributor.author Park, Seong-Ju -
dc.contributor.author Park, Seung-Han -
dc.contributor.author Kim, Ung -
dc.date.accessioned 2023-12-22T13:06:50Z -
dc.date.available 2023-12-22T13:06:50Z -
dc.date.created 2019-07-11 -
dc.date.issued 1993-01 -
dc.description.abstract Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single photon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases. -
dc.identifier.bibliographicCitation SOLID STATE COMMUNICATIONS, v.85, no.2, pp.111 - 114 -
dc.identifier.doi 10.1016/0038-1098(93)90357-S -
dc.identifier.issn 0038-1098 -
dc.identifier.scopusid 2-s2.0-0027302074 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27120 -
dc.identifier.url https://www.sciencedirect.com/science/article/pii/003810989390357S?via%3Dihub -
dc.identifier.wosid A1993KH26000009 -
dc.language 영어 -
dc.publisher PERGAMON-ELSEVIER SCIENCE LTD -
dc.title TEMPERATURE AND SIZE DEPENDENT EXCITONIC RELAXATION PROCESS IN GAAS/ALGAAS QUANTUM-WELLS -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Condensed Matter -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus ROOM-TEMPERATURE -
dc.subject.keywordPlus GAAS -
dc.subject.keywordPlus DYNAMICS -

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