File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Hongsik
- Future Semiconductor Technology Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
A process integration of high-performance 64-kb MRAM
- Author(s)
- Kim, H.J., Jeong, W.C., Koh, K.H., Jeong, G.T., Park, J.H., Lee, S.Y., Oh, J.H., Song, I.H., Jeong, H.S., Kim, K.
- Issued Date
- 2003-09
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.39, no.5, pp.2851 - 2853
- Abstract
- We have demonstrated fully integrated 64-kb magnetoresistive random access memory (MRAM) using 0.24-mum CMOS technology and discussed some key issues in process integration. Optimal tunneling magnetoresistive (TMR) properties of MRAM bits (37% of TMR ratio and 5-10 kOmega.mum(2) of RA) were obtained mainly by the control of bottom electrode roughness, and electrical shorting was avoided by some commercialized wet solutions. In viewpoint of process integration, excellent TMR properties of magnetic tunnel junction (MTJ) fresh films and prevention of their degradation in post patterning process are two crucial factors, and especially, electrical shorting requires some careful control.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0018-9464
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.