Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
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- Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
- Yoon, Jong Moon; Jeong, Hu Young; Hong, Sung Hoon; Yin, You; Moon, Hyoung Seok; Jeong, Seong-Jun; Han, Jun Hee; Kim, Yong In; Kim, Yong Tae; Lee, Heon; Kim, Sang Ouk; Lee, Jeong Yong
- Aerial arrays; Block copolymer lithography; Cell dimensions; Device operations; Low Power; Low reset currents; Low-power consumption; Nano scale; Nanoarrays; Phase change memory cells; Reset currents; RESET pulse; Set operation; Threshold switching; Ultrahigh density
- Issue Date
- ROYAL SOC CHEMISTRY
- JOURNAL OF MATERIALS CHEMISTRY, v.22, no.4, pp.1347 - 1351
- We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: similar to 207 Gbit inch(-2)) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mu A. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.
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