Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
Cited 0 times inCited 2 times in
- Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
- Yoon, Jong Moon; Jeong, Hu Young; Hong, Sung Hoon; Yin, You; Moon, Hyoung Seok; Jeong, Seong-Jun; Han, Jun Hee; Kim, Yong In; Kim, Yong Tae; Lee, Heon; Kim, Sang Ouk; Lee, Jeong Yong
- Aerial arrays; Block copolymer lithography; Cell dimensions; Device operations; Low Power; Low reset currents; Low-power consumption; Nano scale; Nanoarrays; Phase change memory cells; Reset currents; RESET pulse; Set operation; Threshold switching; Ultrahigh density
- Issue Date
- ROYAL SOC CHEMISTRY
- JOURNAL OF MATERIALS CHEMISTRY, v.22, no.4, pp.1347 - 1351
- We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: similar to 207 Gbit inch(-2)) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mu A. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.
- ; Go to Link
- Appears in Collections:
- SE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.