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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1351 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1347 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 22 | - |
dc.contributor.author | Yoon, Jong Moon | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Hong, Sung Hoon | - |
dc.contributor.author | Yin, You | - |
dc.contributor.author | Moon, Hyoung Seok | - |
dc.contributor.author | Jeong, Seong-Jun | - |
dc.contributor.author | Han, Jun Hee | - |
dc.contributor.author | Kim, Yong In | - |
dc.contributor.author | Kim, Yong Tae | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Kim, Sang Ouk | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.date.accessioned | 2023-12-22T05:37:24Z | - |
dc.date.available | 2023-12-22T05:37:24Z | - |
dc.date.created | 2013-06-24 | - |
dc.date.issued | 2012-01 | - |
dc.description.abstract | We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: similar to 207 Gbit inch(-2)) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mu A. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.22, no.4, pp.1347 - 1351 | - |
dc.identifier.doi | 10.1039/c1jm14190b | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.scopusid | 2-s2.0-84855398683 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2638 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84855398683 | - |
dc.identifier.wosid | 000298878100015 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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