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Park, Hyeong‐Ryeol
Laboratory for Ultrafast & Nanoscale Plasmonics
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Atomic layer lithography of wafer-scale nanogap arrays for extreme confinement of electromagnetic waves

Author(s)
Chen, XiaoshuPark, Hyeong-RyeolPelton, MatthewPiao, XianjiLindquist, Nathan C.Im, HyungsoonKim, Yun JungAhn, Jae SungAhn, Kwang JunPark, NamkyooKim, Dai-SikOh, Sang-Hyun
Issued Date
2013-09
DOI
10.1038/ncomms3361
URI
https://scholarworks.unist.ac.kr/handle/201301/26326
Fulltext
https://www.nature.com/articles/ncomms3361
Citation
NATURE COMMUNICATIONS, v.4, pp.2361
Abstract
Squeezing light through nanometre-wide gaps in metals can lead to extreme field enhancements, nonlocal electromagnetic effects and light-induced electron tunnelling. This intriguing regime, however, has not been readily accessible to experimentalists because of the lack of reliable technology to fabricate uniform nanogaps with atomic-scale resolution and high throughput. Here we introduce a new patterning technology based on atomic layer deposition and simple adhesive-tape-based planarization. Using this method, we create vertically oriented gaps in opaque metal films along the entire contour of a millimetre-sized pattern, with gap widths as narrow as 9.9 angstrom, and pack 150,000 such devices on a 4-inch wafer. Electromagnetic waves pass exclusively through the nanogaps, enabling background-free transmission measurements. We observe resonant transmission of near-infrared waves through 1.1-nm-wide gaps (lambda/1,295) and measure an effective refractive index of 17.8. We also observe resonant transmission of millimetre waves through 1.1-nm-wide gaps (lambda/4,000,000) and infer an unprecedented field enhancement factor of 25,000.
Publisher
NATURE PUBLISHING GROUP
ISSN
2041-1723
Keyword
ENHANCED RAMAN-SPECTROSCOPYOPTICAL-TRANSMISSIONPLASMONIC NANOGAPFIELD ENHANCEMENTLIGHTGUIDESDEPOSITIONAPERTURESQUANTUMFILMS

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