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- Namgung, Seon
- Quantum Device Lab.
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High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering
- Author(s)
- Haratipour, Nazila, Namgung, Seon, Grassi, Roberto, Low, Tony, Oh, Sang-Hyun, Koester, Steven J.
- Issued Date
- 2017-05
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.38, no.5, pp.685 - 688
- Abstract
- We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7 mu m are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110 mu S/mu m and p-MOSFETs with contact resistance as low as 0.31 k Omega.mu m are demonstrated.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0741-3106
- Keyword (Author)
- 2D materials, black phosphorus, crystal, orientation, MOSFETs
- Keyword
- FIELD-EFFECT TRANSISTORS
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