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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 688 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 685 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 38 | - |
dc.contributor.author | Haratipour, Nazila | - |
dc.contributor.author | Namgung, Seon | - |
dc.contributor.author | Grassi, Roberto | - |
dc.contributor.author | Low, Tony | - |
dc.contributor.author | Oh, Sang-Hyun | - |
dc.contributor.author | Koester, Steven J. | - |
dc.date.accessioned | 2023-12-21T22:13:30Z | - |
dc.date.available | 2023-12-21T22:13:30Z | - |
dc.date.created | 2019-03-04 | - |
dc.date.issued | 2017-05 | - |
dc.description.abstract | We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7 mu m are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 times (1.5 times) higher maximum current compared with zigzag devices. Saturated transconductance values up to 4.8 times (1.6 times) higher for BP p-MOSFETs (n-MOSFETs) oriented along the armchair direction compared with the zigzag direction are observed. Using this orientation control and contact engineering, n-MOSFETs with transconductance of 110 mu S/mu m and p-MOSFETs with contact resistance as low as 0.31 k Omega.mu m are demonstrated. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.38, no.5, pp.685 - 688 | - |
dc.identifier.doi | 10.1109/LED.2017.2679117 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-85019184224 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26297 | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7873224 | - |
dc.identifier.wosid | 000400413200039 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | black phosphorus | - |
dc.subject.keywordAuthor | crystal | - |
dc.subject.keywordAuthor | orientation | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
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