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손창희

Sohn, Chang Hee
Laboratory for Unobtainable Functional Oxides
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Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate

Author(s)
Agarwal, RadheSharma, YogeshChang, SiliangPitike, Krishna C.Sohn, ChangheeNakhmanson, Serge M.Takoudis, Christos G.Lee, Ho NyungTonelli, RachelGardner, JonathanScott, James F.Katiyar, Ram S.Hong, Seungbum
Issued Date
2018-02
DOI
10.1103/PhysRevB.97.054109
URI
https://scholarworks.unist.ac.kr/handle/201301/26287
Fulltext
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.054109
Citation
PHYSICAL REVIEW B, v.97, no.5, pp.054109
Abstract
Tin titanate (SnTiO3) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the Sn2+ to Sn4+. In the present paper, we show two things: first, perovskite phase SnTiO3 can be prepared by atomic-layer deposition directly onto p-type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p-type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTiO3. Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 mu C/cm(2) remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt/SnTiO3/Si/SnTiO3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.
Publisher
AMER PHYSICAL SOC
ISSN
2469-9950
Keyword
TOTAL-ENERGY CALCULATIONSAUGMENTED-WAVE METHODPHASE-TRANSITIONTHIN-FILMSBASIS-SETSNTIO31ST-PRINCIPLESPEROVSKITECRYSTALSSYSTEMS

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