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DC Field | Value | Language |
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dc.citation.number | 5 | - |
dc.citation.startPage | 054109 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 97 | - |
dc.contributor.author | Agarwal, Radhe | - |
dc.contributor.author | Sharma, Yogesh | - |
dc.contributor.author | Chang, Siliang | - |
dc.contributor.author | Pitike, Krishna C. | - |
dc.contributor.author | Sohn, Changhee | - |
dc.contributor.author | Nakhmanson, Serge M. | - |
dc.contributor.author | Takoudis, Christos G. | - |
dc.contributor.author | Lee, Ho Nyung | - |
dc.contributor.author | Tonelli, Rachel | - |
dc.contributor.author | Gardner, Jonathan | - |
dc.contributor.author | Scott, James F. | - |
dc.contributor.author | Katiyar, Ram S. | - |
dc.contributor.author | Hong, Seungbum | - |
dc.date.accessioned | 2023-12-21T21:09:02Z | - |
dc.date.available | 2023-12-21T21:09:02Z | - |
dc.date.created | 2019-03-08 | - |
dc.date.issued | 2018-02 | - |
dc.description.abstract | Tin titanate (SnTiO3) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the Sn2+ to Sn4+. In the present paper, we show two things: first, perovskite phase SnTiO3 can be prepared by atomic-layer deposition directly onto p-type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p-type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTiO3. Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 mu C/cm(2) remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt/SnTiO3/Si/SnTiO3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application. | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.97, no.5, pp.054109 | - |
dc.identifier.doi | 10.1103/PhysRevB.97.054109 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.scopusid | 2-s2.0-85043754235 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26287 | - |
dc.identifier.url | https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.054109 | - |
dc.identifier.wosid | 000425491500002 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | BASIS-SET | - |
dc.subject.keywordPlus | SNTIO3 | - |
dc.subject.keywordPlus | 1ST-PRINCIPLES | - |
dc.subject.keywordPlus | PEROVSKITE | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | SYSTEMS | - |
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