Full metadata record
DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.startPage | 1801370 | - |
dc.citation.title | ADVANCED SCIENCE | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Song, Seunguk | - |
dc.contributor.author | Kim, Se-Yang | - |
dc.contributor.author | Kwak, Jinsung | - |
dc.contributor.author | Jo, Yongsu | - |
dc.contributor.author | Kim, Jung Hwa | - |
dc.contributor.author | Lee, Jong Hwa | - |
dc.contributor.author | Lee, Jae-Ung | - |
dc.contributor.author | Kim, Jong Uk | - |
dc.contributor.author | Yun, Hyung Duk | - |
dc.contributor.author | Sim, Yeoseon | - |
dc.contributor.author | Wang, Jaewon | - |
dc.contributor.author | Lee, Do Hee | - |
dc.contributor.author | Seok, Shi-Hyun | - |
dc.contributor.author | Kim, Tae-il | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.date.accessioned | 2023-12-21T19:38:58Z | - |
dc.date.available | 2023-12-21T19:38:58Z | - |
dc.date.created | 2018-12-18 | - |
dc.date.issued | 2019-02 | - |
dc.description.abstract | As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching approximate to 100 MA cm(-2), remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (approximate to 16.4 W cm(-1)) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics. | - |
dc.identifier.bibliographicCitation | ADVANCED SCIENCE, v.6, no.3, pp.1801370 | - |
dc.identifier.doi | 10.1002/advs.201801370 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.scopusid | 2-s2.0-85058403466 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/25477 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201801370 | - |
dc.identifier.wosid | 000458118100017 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.title | Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | bottom-up process | - |
dc.subject.keywordAuthor | electrical performance and reliability | - |
dc.subject.keywordAuthor | future nanoelectronics | - |
dc.subject.keywordAuthor | nanoscale interconnect | - |
dc.subject.keywordAuthor | tungsten ditelluride (WTe2) | - |
dc.subject.keywordPlus | CURRENT-DENSITY | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | NANOWIRES | - |
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