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김봉수

Kim, BongSoo
Polymer & Organic Semiconductor Lab.
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Transition from direct tunneling to field emission in metal-molecule-metal junctions

Author(s)
Beebe, Jeremy M.Kim, BongSooGadzuk, J. W.Frisbie, C. DanielKushmerick, James G.
Issued Date
2006-07
DOI
10.1103/PhysRevLett.97.026801
URI
https://scholarworks.unist.ac.kr/handle/201301/24831
Fulltext
https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.97.026801
Citation
PHYSICAL REVIEW LETTERS, v.97, no.2, pp.026801
Abstract
Current-voltage measurements of metal-molecule-metal junctions formed from pi-conjugated thiols exhibit an inflection point on a plot of ln(I/V-2) vs 1/V, consistent with a change in transport mechanism from direct tunneling to field emission. The transition voltage was found to scale linearly with the offset in energy between the Au Fermi level and the highest occupied molecular orbital as determined by ultraviolet photoelectron spectroscopy. Asymmetric voltage drops at the two metal-molecule interfaces cause the transition voltage to be dependent on bias polarity.
Publisher
AMER PHYSICAL SOC
ISSN
0031-9007
Keyword
ATOMIC-FORCE MICROSCOPYNEGATIVE DIFFERENTIAL RESISTANCESELF-ASSEMBLED MONOLAYERSCONTACT RESISTANCEWORK FUNCTIONTRANSPORTSAMS

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