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김봉수

Kim, BongSoo
Polymer & Organic Semiconductor Lab.
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dc.citation.number 2 -
dc.citation.startPage 026801 -
dc.citation.title PHYSICAL REVIEW LETTERS -
dc.citation.volume 97 -
dc.contributor.author Beebe, Jeremy M. -
dc.contributor.author Kim, BongSoo -
dc.contributor.author Gadzuk, J. W. -
dc.contributor.author Frisbie, C. Daniel -
dc.contributor.author Kushmerick, James G. -
dc.date.accessioned 2023-12-22T09:44:35Z -
dc.date.available 2023-12-22T09:44:35Z -
dc.date.created 2018-09-10 -
dc.date.issued 2006-07 -
dc.description.abstract Current-voltage measurements of metal-molecule-metal junctions formed from pi-conjugated thiols exhibit an inflection point on a plot of ln(I/V-2) vs 1/V, consistent with a change in transport mechanism from direct tunneling to field emission. The transition voltage was found to scale linearly with the offset in energy between the Au Fermi level and the highest occupied molecular orbital as determined by ultraviolet photoelectron spectroscopy. Asymmetric voltage drops at the two metal-molecule interfaces cause the transition voltage to be dependent on bias polarity. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW LETTERS, v.97, no.2, pp.026801 -
dc.identifier.doi 10.1103/PhysRevLett.97.026801 -
dc.identifier.issn 0031-9007 -
dc.identifier.scopusid 2-s2.0-33745866285 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/24831 -
dc.identifier.url https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.97.026801 -
dc.identifier.wosid 000239057200052 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title Transition from direct tunneling to field emission in metal-molecule-metal junctions -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus ATOMIC-FORCE MICROSCOPY -
dc.subject.keywordPlus NEGATIVE DIFFERENTIAL RESISTANCE -
dc.subject.keywordPlus SELF-ASSEMBLED MONOLAYERS -
dc.subject.keywordPlus CONTACT RESISTANCE -
dc.subject.keywordPlus WORK FUNCTION -
dc.subject.keywordPlus TRANSPORT -
dc.subject.keywordPlus SAMS -

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