Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors
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- Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors
- Oh, Joon Hak; Wei, Peng; Bao, Zhenan
- Active Layer; Air stability; Air-stable; Doping location; Electrode contacts; Electron transport; In-vacuum; N-channel; n-Type doping; OR channels; Organic transistor; Perylene diimides; Systematic study; Trapped electrons
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.97, no.24, pp. -
- The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air.
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