dc.citation.number |
24 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
97 |
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dc.contributor.author |
Oh, Joon Hak |
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dc.contributor.author |
Wei, Peng |
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dc.contributor.author |
Bao, Zhenan |
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dc.date.accessioned |
2023-12-22T06:39:33Z |
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dc.date.available |
2023-12-22T06:39:33Z |
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dc.date.created |
2013-06-12 |
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dc.date.issued |
2010-12 |
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dc.description.abstract |
The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.97, no.24 |
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dc.identifier.doi |
10.1063/1.3527972 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-78650385731 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/2483 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=78650385731 |
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dc.identifier.wosid |
000285481000079 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors |
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dc.type |
Article |
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dc.relation.journalWebOfScienceCategory |
Physics, Applied |
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dc.relation.journalResearchArea |
Physics |
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dc.description.journalRegisteredClass |
scie |
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dc.description.journalRegisteredClass |
scopus |
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