BROWSE

Related Researcher

Author's Photo

Park, Youngsin
Center for Superfunctional Materials
Research Interests

ITEM VIEW & DOWNLOAD

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
Author
Park, YoungsinChan, Christopher C. S.Nuttall, LukePuchtler, Tim J.Taylor, Robert A.Kim, NammeeJo, YongcheolIm, Hyunsik
Issue Date
2018-05
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.8, pp.8124
Abstract
We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.
URI
https://scholarworks.unist.ac.kr/handle/201301/24360
URL
https://www.nature.com/articles/s41598-018-26642-8
DOI
10.1038/s41598-018-26642-8
ISSN
2045-2322
Appears in Collections:
CHM_Journal Papers
Files in This Item:
000433061300006.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU